Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

• Published in: Journal of crystal growth 1995-07, Vol.152 (3), p.135-142
• Main Authors: Chandrasekhar, D., Smith, David J., Strite, S., Lin, M.E., Morkoç, H.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(95)00041-0

High-resolution electron microscopy has been used to characterize the microstructure of thin films of GaN, AlN and InN, as grown by plasma-enhanced molecular beam epitaxy. Zincblende and wurtzite polytypes were preferentially nucleated using (001) GaAs and (0001) 6H SiC substrates, respectively. Stacking faults and microtwins along 111 planes dominated the zincblende films, whereas stacking faults along 0002 planes and threading defects originating at the substrate surface were most prevalent in the wurtzite phase. Improved crystal quality was achieved by growing the films on suitable buffer layers.