Study of the band offset for [formula omitted] heterojunctions grown by hot wall epitaxy

A study of the band offset for ZnSe(100) GaAs(100) heterojunctions measured with X-ray photoelectron spectroscopy (XPS) is reported. The sample was prepared by growing ZnSe films on a GaAs(100) substrate using the hot wall epitaxy (HWE) method. X-ray diffraction (XRD) and photoluminescence (PL) spec...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1996-02, Vol.158 (4), p.455-458
Main Authors: Yang, Yi, Yang, Yukun, Li, Wangcheng, Li, Wenming, Yu, Lei, Xiong, Xin, Wang, Shanli, Huang, Helan
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A study of the band offset for ZnSe(100) GaAs(100) heterojunctions measured with X-ray photoelectron spectroscopy (XPS) is reported. The sample was prepared by growing ZnSe films on a GaAs(100) substrate using the hot wall epitaxy (HWE) method. X-ray diffraction (XRD) and photoluminescence (PL) spectra proved that the ZnSe epilayer is a single crystal grown along the 〈100〉 direction.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00315-0