Test of Vegard's law in thin epitaxial SiGe layers

Ultrametastable pseudomorphic Si 1− x Ge x layers (on (100) Si) with Ge contents x up to 32% and partly relaxed SiGe layers with Ge contents between 35% and 75% were grown by molecular beam epitaxy at growth temperatures between 310 and 575°C. The relation between lattice constant of the alloy layer...

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Bibliographic Details
Published in:Journal of crystal growth 1995-12, Vol.157 (1), p.68-72
Main Authors: Kasper, E., Schuh, A., Bauer, G., Holländer, B., Kibbel, H.
Format: Article
Language:English
Subjects:
Composition and phase identification
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Ultrametastable pseudomorphic Si 1− x Ge x layers (on (100) Si) with Ge contents x up to 32% and partly relaxed SiGe layers with Ge contents between 35% and 75% were grown by molecular beam epitaxy at growth temperatures between 310 and 575°C. The relation between lattice constant of the alloy layers and chemical composition (Ge content) was measured by X-ray methods (reciprocal space mapping) and by Rutherford backscattering. Slight negative deviations from the linear relationship (Vegard's law) were found which confirm very early bulk data gained by Dismukes.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00373-8