Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy

Films of Ga(AsN) and Al(AsN) have been grown using a modified molecular beam epitaxy method. In both cases the concentration of nitrogen incorporated is directly proportional to the amount of active nitrogen reaching the sample surface. For the Ga(AsN) samples we present evidence that phase separati...

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Bibliographic Details
Published in:Journal of crystal growth 1996-02, Vol.158 (4), p.399-402
Main Authors: Cheng, T.S., Foxon, C.T., Jenkins, L.C., Hooper, S.E., Orton, J.W., Novikov, S.V., Popova, T.B., Tret'yakov, V.V.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:Films of Ga(AsN) and Al(AsN) have been grown using a modified molecular beam epitaxy method. In both cases the concentration of nitrogen incorporated is directly proportional to the amount of active nitrogen reaching the sample surface. For the Ga(AsN) samples we present evidence that phase separation occurs into nitrogen doped GaAs and arsenic doped GaN regions with a grain size of less than 3 μm.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00551-X