Fundamental studies of p-type doping of CdTe

This paper reviews recent developments of p-type doping in CdTe, in which hole concentrations of 5 × 10 19cm −3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant and damage profiles, and the atom redistribution after the annealing were calculated to...

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Bibliographic Details
Published in:Journal of crystal growth 1996-04, Vol.161 (1), p.73-81
Main Authors: Hwang, H.L., Hsu, Klaus Y.J., Ueng, H.Y.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:This paper reviews recent developments of p-type doping in CdTe, in which hole concentrations of 5 × 10 19cm −3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant and damage profiles, and the atom redistribution after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms. The creation and the annihilation of the phosphorus interstitials were explained by analyzing the electronic structure of the phosphorus interstitial following a molecular orbital approach and density functional theory. All these results confirmed the importance of the melting effect of pulsed electron beam (PEB) annealing in obtaining the highest doping efficiencies in II–VI compounds.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00614-1