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Effects of spatial dispersion in the temperature dependence of the optical absorption in ZnSe heteroepitaxial layers and CdTe and ZnTe crystals
The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystals of CdTe, ZnTe and heteroepitaxial layers of ZnSe. In all cases the frequency integrated absorption coefficient K is found to increase monotonously with temperature T up to T = T∗ and keeps cons...
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Published in: | Journal of crystal growth 1996-02, Vol.159 (1-4), p.843-847 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystals of CdTe, ZnTe and heteroepitaxial layers of ZnSe. In all cases the frequency integrated absorption coefficient K is found to increase monotonously with temperature T up to T = T∗ and keeps constant above T∗. The temperatures T∗, depending on semiconducting materials, might be considered as critical ones corresponding to a change in polaritonic energy transport mechanism due to the lack of spatial dispersion at T > T∗. The temperature dependence of K gives the possibility to calculate oscillator strengths or longitudinal-transverse splitting ΔLT as 0.45, 0.65 and 1.6 meV for CdTe, ZnTe and ZnSe, respectively. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/0022-0248(95)00786-5 |