Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

We describe the photoluminescence and reflectance properties of Zn1 − xMnxSySe1 − y grown by molecular beam epitaxy on (100) GaAs substrates. A range of compositions has been explored with lattice constants ranging from 5.48 to 5.71 Å, and 300 (1.7) K bandgaps ranging from 2.68 (2.79) to 3.43 (3.65)...

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Bibliographic Details
Published in:Journal of crystal growth 1996-02, Vol.159 (1-4), p.50-53
Main Authors: Hutchins, J.W., Parameshwaran, B., Skromme, B.J., Smith, David J., Sivananthan, S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Semiconductors
Visible and ultraviolet spectra
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Summary:We describe the photoluminescence and reflectance properties of Zn1 − xMnxSySe1 − y grown by molecular beam epitaxy on (100) GaAs substrates. A range of compositions has been explored with lattice constants ranging from 5.48 to 5.71 Å, and 300 (1.7) K bandgaps ranging from 2.68 (2.79) to 3.43 (3.65) eV. A multiple quantum well heterostructure with ZnSe wells exhibits quantum confinement up to 2.91 eV. The material is of potential interest as a lattice-matched cladding layer in ZnSe-based separate confinement heterostructure short wavelength lasers.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00854-3