Structure and device characteristics of [formula omitted] solar cells

Al x Ga 1 − x As GaAs heterostructures have been grown by two different liquid phase epitaxy (LPE) modes, i.e. the supercooled and melt-etch methods, for the fabrication of highly efficient solar cells. Typical structural characteristics observed under a transmission electron microscope (TEM), an Au...

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Bibliographic Details
Published in:Journal of crystal growth 1996-04, Vol.162 (1), p.43-47
Main Authors: Li, B., Xiang, X.B., You, Z.P., Xu, Y., Fei, X.Y.
Format: Article
Language:English
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Summary:Al x Ga 1 − x As GaAs heterostructures have been grown by two different liquid phase epitaxy (LPE) modes, i.e. the supercooled and melt-etch methods, for the fabrication of highly efficient solar cells. Typical structural characteristics observed under a transmission electron microscope (TEM), an Auger energy spectrometer (AES) and corresponding device parameters were presented. The results indicated that the P +PNN + configuration grown by the melt-etch method could be used to produce high performance, large area solar cells with effectively reducing the defects of the substrate and improving the minority carrier collection by forming a compositionally graded region in the window layer.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00948-5