Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

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Bibliographic Details
Published in:Journal of crystal growth 1996-07, Vol.164 (1-4), p.34-39
Main Authors: DIETZ, N, ROSSOW, U, ASPNES, D. E, BACHMANN, K. J
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)01018-1