Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes

Molecular dynamics simulations on In 1− x Ga x As/GaAs(100) systems are performed showing the dynamics of threading dislocations in the overlayers and the formation of misfit dislocations at the heterojunction interface. The developed code, using a modified Tersoff potential, simulates the threading...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1995-05, Vol.150 (1-4), p.176-179
Main Authors: Ashu, P.A., Jefferson, J.H., Cullis, A.G., Hagston, W.E., Whitehouse, C.R.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Molecular dynamics simulations on In 1− x Ga x As/GaAs(100) systems are performed showing the dynamics of threading dislocations in the overlayers and the formation of misfit dislocations at the heterojunction interface. The developed code, using a modified Tersoff potential, simulates the threading dislocation dynamics in the InGaAs overlayer, and also the formation of interface misfit dislocations. Values for critical thicknesses are predicted and the atomic structure of the dislocation cores are determined.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)80202-N