RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface

A new (2 × 1) surface structure was observed during the c(4 × 4) → (2 × 4) transition while increasing the temperature in the range of 430–500°C. Different models based on the electron stability criterion are proposed for this structure. Predictions made using these models are compared with experime...

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Bibliographic Details
Published in:Journal of crystal growth 1996-09, Vol.166 (1-4), p.72-77
Main Authors: Alexeev, A.N., Karpov, S.Yu, Pogorelsky, Yu.V., Sokolov, I.A.
Format: Article
Language:English
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Summary:A new (2 × 1) surface structure was observed during the c(4 × 4) → (2 × 4) transition while increasing the temperature in the range of 430–500°C. Different models based on the electron stability criterion are proposed for this structure. Predictions made using these models are compared with experimental observations. The time-resolved study of c(4 × 4) → (2 × 4) transition dynamics shows that 0.2 ML of gallium deposited on the surface induce this transition. This value is close to the gallium coverage ϑGa = 0.17 ML required for the electron stabilization of the surface completely filled by arsenic dimers.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(96)00038-3