The carbon doping mechanism in GaAs using trimethylgallium and trimethylarsenic

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Bibliographic Details
Published in:Journal of crystal growth 1996-10, Vol.167 (3-4), p.557-565
Main Authors: KOHDA, H, WADA, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(96)00264-3