Bound exciton luminescence in epitaxial Sn-doped gallium-arsenide

The photoluminescence spectrum of n-type Sn-doped GaAs,grown by liquid phase epitaxy, exhibits a sharp emission line at 1.507 eV. This line is attributed to a bound exciton. The binding center is a Sn-acceptor which is neutralized by a photo-excited hole before binding the exciton. This interpretati...

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Bibliographic Details
Published in:Journal of luminescence 1970, Vol.3 (3), p.175-184
Main Authors: Bimberg, D., Schairer, W., Sondergeld, M., Yep, T.O.
Format: Article
Language:English
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Summary:The photoluminescence spectrum of n-type Sn-doped GaAs,grown by liquid phase epitaxy, exhibits a sharp emission line at 1.507 eV. This line is attributed to a bound exciton. The binding center is a Sn-acceptor which is neutralized by a photo-excited hole before binding the exciton. This interpretation is supported by absorption measurements, by the intensity dependence of the emission, and by Zeeman studies. The Zeeman effect shows the lowest bound exciton state to have angular momentum J = 1 2 .
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(71)90055-X