Kinetics of exciton formation and relaxation in GaAs

Exciton-polariton photoluminescence kinetics under short-pulse excitation in nominally undoped GaAs has been investigated. A delayed onset revealing energy relaxation of electrons and polaritons has been observed. Energy relaxation speeds up with an increase in impurity concentration and depends on...

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Bibliographic Details
Published in:Journal of luminescence 1992-07, Vol.53 (1-6), p.423-426
Main Authors: Aaviksoo, J., Reimand, I., Rossin, V.V., Travnikov, V.V.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Exciton-polariton photoluminescence kinetics under short-pulse excitation in nominally undoped GaAs has been investigated. A delayed onset revealing energy relaxation of electrons and polaritons has been observed. Energy relaxation speeds up with an increase in impurity concentration and depends on the type of conductivity. At high repetition rate the next excitation pulse causes a fast quenching of polariton luminescence in the vicinity of exciton resonance due to heating of excitons by photoexcited hot electrons.
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(92)90189-G