Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe: Te crystals

The investigations of photoluminescence and of photoinduced absorption have been carried out in ZnSe:Te crystals. The parameters of series of deep centers of intrinsic defects and their associates have been determined, and their connection with luminescence in ZnSe:Te has been revealed. The formatio...

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Bibliographic Details
Published in:Journal of luminescence 1992, Vol.52 (1), p.71-81
Main Authors: Baltramiejūnas, R., Ryzhikov, V.D., Gavryushin, V., Kazlauskas, A., Račiukaitis, G., Silin, V.I., Juodžbalis, D., Stepankevičius, V.
Format: Article
Language:English
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Summary:The investigations of photoluminescence and of photoinduced absorption have been carried out in ZnSe:Te crystals. The parameters of series of deep centers of intrinsic defects and their associates have been determined, and their connection with luminescence in ZnSe:Te has been revealed. The formation of high stable centers of { V - Zn + Te 0 Se + D +} 0 with the compensation of local deformation and charge is caused by the Te doping. The annealing of ZnSe:Te crystals in halogen vapour leads to the creation of IR-radiative centers of rapid hole capture which quench a red luminescence.
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(92)90234-Z