Preparation and electrical properties of amorphous InSb

Layers of amorphous InSb are prepared by flash evaporation on cold substrates. The main properties of these layers are: The electrical band gap E g el increases from 0.17 eV in crystalline up to 0.65 eV in amorphous InSb. E g el, however, has no characteristic value, but can be varied by annealing b...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1971, Vol.5 (3), p.264-275
Main Authors: Eckenbach, W, Fuhs, W, Stuke, J
Format: Article
Language:English
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Summary:Layers of amorphous InSb are prepared by flash evaporation on cold substrates. The main properties of these layers are: The electrical band gap E g el increases from 0.17 eV in crystalline up to 0.65 eV in amorphous InSb. E g el, however, has no characteristic value, but can be varied by annealing below the transition temperature between 0.4 and 0.65 eV. The absorption edge as well as the photoconduction edge are shifted to higher photon energy in the amorphous state.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(71)90035-4