Identification of trapping mechanisms in amorphous compounds using cavity perturbation techniques

In many semiconductor materials, the photodielectric effect is manifested as a decrease in the real part of the complex dielectric constant. The optically induced dielectric perturbation is used to vary the resonant frequency of a microwave cavity. Amorphous semiconductors are known to possess vario...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1972, Vol.8, p.614-620
Main Authors: Stone, J.L., Haden, C.R., Collins, S.A.
Format: Article
Language:English
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Summary:In many semiconductor materials, the photodielectric effect is manifested as a decrease in the real part of the complex dielectric constant. The optically induced dielectric perturbation is used to vary the resonant frequency of a microwave cavity. Amorphous semiconductors are known to possess various levels of trapping centers and it can be shown that the magnitude of the photodielectric effect is proportional to the density and energy levels of these traps. Several different samples of 2As 2Se 3·As 2Te 3, As 2Te 3, As 2S 3, and Te(55%)As(38%)Ge(4%)Si(3%) were used in photodielectric experiments. None of the experiments, conducted at 4.2°K, 77°K, and 300°K, produced a photodielectric effect. Several reasons for the absence of positive results are analyzed.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(72)90200-1