The effect of hydrogen content on the properties of reactively sputtered amorphous SiH

Hydrogenated a-Si films containing exclusively monohydride bonding have been produced over a range of hydrogen densities between 0 and 20 at. % by reactive sputtering. Deposition, conductivity, activation energy, and optical gap data are presented for these films. These data indicate that 5 at. % of...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1980, Vol.35, p.261-266
Main Authors: Jeffrey, F.R., Shanks, H.R., Danielson, G.C.
Format: Article
Language:English
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Summary:Hydrogenated a-Si films containing exclusively monohydride bonding have been produced over a range of hydrogen densities between 0 and 20 at. % by reactive sputtering. Deposition, conductivity, activation energy, and optical gap data are presented for these films. These data indicate that 5 at. % of hydrogen bonds to sites which would otherwise be dangling or spin paired bonds while additional hydrogen replaced SiSi bonds. It is proposed that hydrogen added above 5 at. % reduces the recombination rate by relaxing the a-Si network.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(80)90604-3