Disorder induced change of 2p core reflectance spectra of ion implanted silicon

2p core reflectance spectra of Si implanted with phosphorus ions have been measured for the first time with very high resolution by use of synchroton radiation. With increasing the dose level, core spectra show the decrease of peak intensity and the broadening of structures due to disruption of crys...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1983-01, Vol.59, p.245-248
Main Authors: Seki, Masami, Taniguchi, Masaki, Suga, Shigemasa, Mikuni, Akira, Kanzaki, Hiroshi, Miyao, Masanobu, Motooka, Teruaki
Format: Article
Language:English
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Summary:2p core reflectance spectra of Si implanted with phosphorus ions have been measured for the first time with very high resolution by use of synchroton radiation. With increasing the dose level, core spectra show the decrease of peak intensity and the broadening of structures due to disruption of crystal ordering. At sufficiently high doses, spectral features are transformed from band excitation type into atomic excitation type. The band effect revives, however, in the samples after pulse laser annealing.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(83)90567-7