Photoacoustic spectroscopy and charge transport of a-Si:H prepared by ion beam deposition

The application of photoacoustic spectroscopy (PAS) to a-Si:H films prepared by ion beam deposition (IBD) is described. The PAS spectra are found to be characterized by a subgap absorption tail superimposed on the Urbach edge. The systematic changes in these features with ion beam hydrogen compositi...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 1983-01, Vol.59, p.289-292
Main Authors: Ceasar, G.P., Okumura, K., Lin, J., Machonkin, M.A., Dudek, L.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The application of photoacoustic spectroscopy (PAS) to a-Si:H films prepared by ion beam deposition (IBD) is described. The PAS spectra are found to be characterized by a subgap absorption tail superimposed on the Urbach edge. The systematic changes in these features with ion beam hydrogen composition are reported. Films made with a low concentration of hydrogen show a strong excess absorption tail whereas this feature is significantly reduced in films fabricated using a higher concentration of hydrogen. The PAS data have been used to estimate the density of defect states responsible for the subgap tail. These results are shown to be consistent with the conclusions deduced from photoconductivity and esr measurements and point to two hydrogenation regimes with different gap state structures in the IBD material.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(83)90578-1