Boron doping effect on optical properties of a-Si films prepared by CVD: Post-hydrogenated and H-exodiffusion study

The effect of post-hydrogenation and H-exodiffusion on the optical parameters is studied in boron doped amorphous silicon prepared by CVD. The optical parameters, which depend on boron concentration, vary when hydrogen is incorporated. The variations observed are compatible with a decreasing of the...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1983, Vol.59, p.305-308
Main Authors: Donnadieu, A., Ferraton, J.P., Coulibaly, S.P., Ance, C., Berger, J.M., De Chelle, F.
Format: Article
Language:English
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Summary:The effect of post-hydrogenation and H-exodiffusion on the optical parameters is studied in boron doped amorphous silicon prepared by CVD. The optical parameters, which depend on boron concentration, vary when hydrogen is incorporated. The variations observed are compatible with a decreasing of the spin density. When the measurement temperature increases, irreversible effects appear due to evolution of hydrogen. These results are interpreted by a simple model of electronic compensation of defects by doping and a variation of the density of electrically active boron atoms with hydrogen concentration.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(83)90582-3