Recombination in low defect density a-Si:H

Two-beam photoconductivity (PC), spin-dependent photoconductivity (SDPC), and light induced ESR (LESR) have been measured on undoped a-Si:H with spin densities ⋍10 16/ cm 3 . Below T=200K PC is quenched by irradiation with photon energies less than 1.5eV. Correspondingly, both LESR and SDPC spectra...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1983-01, Vol.59, p.337-340
Main Authors: Dersch, H, Schweitzer, L
Format: Article
Language:English
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Summary:Two-beam photoconductivity (PC), spin-dependent photoconductivity (SDPC), and light induced ESR (LESR) have been measured on undoped a-Si:H with spin densities ⋍10 16/ cm 3 . Below T=200K PC is quenched by irradiation with photon energies less than 1.5eV. Correspondingly, both LESR and SDPC spectra change. The results are explained by recombination of trapped electrons with trapped holes via neutral dangling bonds. The rate determining step being the diffusion of trapped holes towards doubly occupied dangling bonds.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(83)90589-6