New paramagnetic states in amorphous silicon and germanium

New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 10 17 cm −3 centered around the well known conduction band tail resonance. A second resonance...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1984-01, Vol.66 (1), p.145-150
Main Authors: Stutzmann, M., Stuke, J.
Format: Article
Language:English
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Summary:New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 10 17 cm −3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(84)90313-2