Growth and structure of layered amorphous semiconductors

TEM and x-ray diffraction measurements of superlattices consisting of alternating layers 8 – 1200 A thick of a-Si:H, a-Ge:H, a-Si 1−x C x, and a-SiN x:H, prepared by plasma assisted CVD demonstrate that smooth parallel and uniform layers (RMS roughness < 5 A) with atomically sharp interfaces are...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1984-01, Vol.66 (1), p.351-356
Main Authors: Abeles, B., Tiedje, T., Liang, K.S., Deckman, H.W., Stasiewski, H.C., Scanlon, J.C., Eisenberger, P.M.
Format: Article
Language:English
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Summary:TEM and x-ray diffraction measurements of superlattices consisting of alternating layers 8 – 1200 A thick of a-Si:H, a-Ge:H, a-Si 1−x C x, and a-SiN x:H, prepared by plasma assisted CVD demonstrate that smooth parallel and uniform layers (RMS roughness < 5 A) with atomically sharp interfaces are achievable.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(84)90343-0