Temperature modulated-SCLC, used for the study of the light induced, metastable density of states of a-Si:H

The density of states has been measured for undoped a-Si:H by means of a temperature modulated space-charge-limited currents (TM-SCLC) method in an annealed state A and after prolonged illumination - state B. With increasing illumination time the peak in the DOS at E-E C ∻ 0.61 eV grows and we attri...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1985-12, Vol.77, p.385-388
Main Authors: Kočka, J., Štika, O., Vaněček, M., Tříska, A., Schauer, F., Zmeškal, O.
Format: Article
Language:English
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Summary:The density of states has been measured for undoped a-Si:H by means of a temperature modulated space-charge-limited currents (TM-SCLC) method in an annealed state A and after prolonged illumination - state B. With increasing illumination time the peak in the DOS at E-E C ∻ 0.61 eV grows and we attribute this to the D − Si dangling bond level. From the difference in the position of this D − level and the stable Fermi level in state B ( E F − E C ∻ 0.79 eV ) we deduce the effective correlation energy of Si dangling bond in undoped a-Si:H to be U eff = +0.36 ± 0.03 eV.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(85)90680-5