The role of hydrogen on fermi level hopping in a-Ge

The ac conductivity for samples of R.F sputtered a-Ge:H is qualitatively well explained by hopping in a constant density of states. The wavefunction decay length α −1, the rate prefactor R 0 and the density of states ϱ f can be derived. However, their behaviour with hydrogenation is problematic so w...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1985-12, Vol.77, p.475-478
Main Authors: Summerfield, S, Butcher, P.N, Long, A.R
Format: Article
Language:English
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Summary:The ac conductivity for samples of R.F sputtered a-Ge:H is qualitatively well explained by hopping in a constant density of states. The wavefunction decay length α −1, the rate prefactor R 0 and the density of states ϱ f can be derived. However, their behaviour with hydrogenation is problematic so we generalize to a quadratic density of states. Some progress is made with the prefactor and parallel shift problems.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(85)90701-X