Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy

A low pressure microwave glow discharge deposition process has been developed, which gives a high plasma density of free radical film precursors without formation of gas phase polymers. Consequently, films of a-Si:F:H, of good quality, have been deposited at rates > 100 A ̊ /sec with essentially...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1985-12, Vol.77, p.809-812
Main Authors: Hudgens, S.J, Johncock, A.G, Ovshinsky, S.R
Format: Article
Language:English
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Summary:A low pressure microwave glow discharge deposition process has been developed, which gives a high plasma density of free radical film precursors without formation of gas phase polymers. Consequently, films of a-Si:F:H, of good quality, have been deposited at rates > 100 A ̊ /sec with essentially 100% utilization of feedstock gas. Material properties and their relationship to deposition parameters have been investigated, giving insight into relevant plasma processes.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(85)90783-5