Aluminum-enhanced destruction of a-Si:H/a-SiC:H multilayer structures

The thermal stability of thin film multilayer structures consisting of alternating a-Si:H and a-SiC:H layers with and without an Al overlayer has been studied by X-ray diffraction measurements after annealing at temperatures ranging from 240 to 600°C. Destruction of the multilayer structures with an...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1988-11, Vol.105 (3), p.292-294
Main Authors: Shinohara, Kazuhiko, Moriyama, Fuminori, Natori, Katsuaki, Kukimoto, Hiroshi
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The thermal stability of thin film multilayer structures consisting of alternating a-Si:H and a-SiC:H layers with and without an Al overlayer has been studied by X-ray diffraction measurements after annealing at temperatures ranging from 240 to 600°C. Destruction of the multilayer structures with an Al overlayer starts at 400°C, which is remarkably lower than 600°C for those without Al.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(88)90321-3