NMR and short range order in amorphous silicon

The influence of annealing on the magic angle spinning nmr spectra of sputtered a-Si has been studied. A substantial narrowing of the 29Si nmr width above 400C is observed, while a relatively small change in peak position occurs. Raman scattering and neutron diffraction measurements on this material...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1989-12, Vol.114, p.232-234
Main Authors: Shao, W.-L., Shinar, J., Mitra, S., Gerstein, B.C., Li, F., Fortner, J., Lannin, J.S.
Format: Article
Language:English
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Summary:The influence of annealing on the magic angle spinning nmr spectra of sputtered a-Si has been studied. A substantial narrowing of the 29Si nmr width above 400C is observed, while a relatively small change in peak position occurs. Raman scattering and neutron diffraction measurements on this material indicate that the nmr width change is due to modifications of valence electron states with bond angle disorder.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(89)90122-1