Light-induced degradation of differently prepared heterojunction in a-SI pin solar cells

The influence of incorporating a buffer layer adjacent to the p-SiC/i-Si heterojunction and of light-induced degradation on the performance of a-Si:H pin solar cells was investigated. For characterization we employ stationary (spectral response) as well as transient (delayed-field time of flight) ph...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 1989-12, Vol.115 (1), p.117-119
Main Authors: Kusian, W., Dietrich, K., Karg, F.H.
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of incorporating a buffer layer adjacent to the p-SiC/i-Si heterojunction and of light-induced degradation on the performance of a-Si:H pin solar cells was investigated. For characterization we employ stationary (spectral response) as well as transient (delayed-field time of flight) photocurrent measurements. Out of different kinds of buffer layers a relatively slowly deposited undoped carbon rich layer seems to be best suited. This kind of buffer improves the solar cell performance as well as the electron lifetime at the p/i-junction. However, the introduction of a buffer layer leads to a stronger light degradation. We give evidence that this is primarily due to a lower stability of the p/i-interface and not of the bulk region.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(89)90379-7