Anomalous high zero bias resistance in metal - amorphous silicon - metal structures

It has been demonstrated previously that metal-amorphous silicon-metal thin film structures exhibit non-volatile polarity dependent memory switching after initial conditioning, or ‘forming’, by means of a high applied potential. Under certain circumstances conduction in the formed device is associat...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1989-12, Vol.115 (1), p.171-173
Main Authors: Gage, S.M., Hajto, J., Reynolds, S., Choi, W.K., Rose, M.J., Lecomber, P.G., Snell, A.J., Owen, A.E.
Format: Article
Language:English
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Summary:It has been demonstrated previously that metal-amorphous silicon-metal thin film structures exhibit non-volatile polarity dependent memory switching after initial conditioning, or ‘forming’, by means of a high applied potential. Under certain circumstances conduction in the formed device is associated with a highly conducting filament. The physical nature of the filament is, however, largely unknown. This paper describes the low temperature conductivity behaviour of such formed memory structures, and analyses this in terms of possible metal incorporation in the filamentary region.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(89)90395-5