Measurement of the energy band discontinuities in a-SiC p-i-n junctions by internal photoemission

The energy band discontinuities at the p/i and i/n interfaces of multi-band gap a-SiC p-i-n junctions have been measured by means of the internal photoemission. For the i layer having the optical band gap of 2.58–2.64 eV and the p,n layer having the optical band gap of 1.99 eV, it has been shown tha...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1989-12, Vol.114, p.735-737
Main Authors: Guang-Pu, Wei, Kruangam, Dusit, Endo, Toshihito, Okamoto, Hiroaki, Hamakawa, Yoshihiro
Format: Article
Language:English
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Summary:The energy band discontinuities at the p/i and i/n interfaces of multi-band gap a-SiC p-i-n junctions have been measured by means of the internal photoemission. For the i layer having the optical band gap of 2.58–2.64 eV and the p,n layer having the optical band gap of 1.99 eV, it has been shown that the conduction band discontinuity (ΔE c) and the valence band discontinuity (ΔE v) are about 0.25 ΔE g and 0.75 ΔE g, respectively, where ΔE is the band gap difference.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(89)90704-7