Hydrogen diffusion in a-Si:H/a-Si structure under electrical bias

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1993-12, Vol.164, p.305-308
Main Authors: Song, Zhizhong, Zhang, Fangqing, Yu, Gong, Kong, Guanglin, Chen, Guanghua
Format: Article
Language:English
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Summary:By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)90551-8