Temperature dependent SCLC in amorphous silicon

The temperature dependent space charge limited currents (SCLC), manifested by the complex dependence of the preexponential factor of SCL conductivity on its apparent, injection dependent activation energy, is examined. The main results are : 1. the inherent property of SCL transport is the existence...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1993-12, Vol.164, p.537-540
Main Authors: Schauer, Frantisěk, Zmeškal, Oldřich
Format: Article
Language:English
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Summary:The temperature dependent space charge limited currents (SCLC), manifested by the complex dependence of the preexponential factor of SCL conductivity on its apparent, injection dependent activation energy, is examined. The main results are : 1. the inherent property of SCL transport is the existence of a modified injection dependent, DOS conditioned, quasi-Fermi level statistical shift, originating in the space charge density conservation; 2. The SCLC method thus out to be a unique method to determine straightforwardly Mott's preexponential factor.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)90608-Z