A position detector based on the lateral photoeffect in a-Si:H/ metal (Ti,Mo) multilayers

The lateral photoeffect in multilayer systems (MLS) consisting of ten to thirty periods of alternately sputtered hydrogenated amorphous silicon (a-Si:H) and transition metals (Ti,Mo) was investigated. Photoelectric measurements were performed in coplanar and sandwich electrode configuration. X-ray d...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1993-12, Vol.164-166, p.845-848
Main Authors: Panckow, A.N., Bläsing, J., Drüsedau, T.P.
Format: Article
Language:English
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Summary:The lateral photoeffect in multilayer systems (MLS) consisting of ten to thirty periods of alternately sputtered hydrogenated amorphous silicon (a-Si:H) and transition metals (Ti,Mo) was investigated. Photoelectric measurements were performed in coplanar and sandwich electrode configuration. X-ray diffraction (XRD), small angle X-ray scattering (SAXS) and X-ray reflectometry under grazing incidence (GIR) were used to investigate the structure of the multilayer systems. We found that metal sublayers of optimized position detecting devices do not form continuous layers but metal clusters of around 6nm in diameter and an average separation of 16nm.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)91129-Q