Effect of grain boundary states on CPM spectra of hydrogenated nanocrystalline silicon

The aim of the work is to study the mechanism of optical transitions and transport in nc-Si:H by the Constant Photocurrent Method (CPM). As the crystalline fraction Xc increases an apparent absorption coefficient at 1.2 eV (αref) as high as 5×102 cm−1 and an Urbach energy of 200 meV can be obtained...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1993-12, Vol.164-166, p.1005-1008
Main Authors: Liu, H.N., He, Y.L., Wang, F., Grebner, S.
Format: Article
Language:English
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Summary:The aim of the work is to study the mechanism of optical transitions and transport in nc-Si:H by the Constant Photocurrent Method (CPM). As the crystalline fraction Xc increases an apparent absorption coefficient at 1.2 eV (αref) as high as 5×102 cm−1 and an Urbach energy of 200 meV can be obtained from CPM spectra. The values have no direct relation to the defect density as in amorphous silicon. These results are explained in terms of a different opto-electronic transport mechanism in nc-Si:H.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(93)91168-3