Enhanced optical absorption in microcrystalline silicon

An enhanced optical absorption, compared to crystalline silicon, was observed in the above gap region together with very low defect-connected absorption in microcrystalline silicon (μc-Si:H) prepared by very high frequency glow discharge technique at 70 MHz. As the μc-Si:H material has a very low fr...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1996-05, Vol.198, p.903-906
Main Authors: Beck, N., Meier, J., Fric, J., Remeš, Z., Poruba, A., Flückiger, R., Pohl, J., Shah, A., Vaněček, M.
Format: Article
Language:English
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Summary:An enhanced optical absorption, compared to crystalline silicon, was observed in the above gap region together with very low defect-connected absorption in microcrystalline silicon (μc-Si:H) prepared by very high frequency glow discharge technique at 70 MHz. As the μc-Si:H material has a very low fraction of amorphous phase, a ‘crystalline silicon like’ absorption model is proposed which associates most absorption properties of μc-Si:H to the crystalline phase in the material. Thereby the influence of internal strain, microcrystalline boundaries, hydrogen content and elastic light scattering on the absorption properties are discussed.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(96)00080-4