Amorphous silicon UV photodetectors with rejection of the visible spectrum

A new family of a-Si:H/SiC:H p-i-n photodetectors is presented here. These devices are solar blind, with enhanced sensitivity in the extreme UV spectrum. Typical values of the quantum efficiency at 187 nm and 800 nm are 22% and 0.05%, respectively, with zero bias. Rise and decay times in the dark un...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1996-05, Vol.198, p.1198-1201
Main Authors: de Cesare, Giampiero, Iorio, Vincenzo, Irrera, Fernanda, Palma, Fabrizio, Tucci, Mario
Format: Article
Language:English
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Summary:A new family of a-Si:H/SiC:H p-i-n photodetectors is presented here. These devices are solar blind, with enhanced sensitivity in the extreme UV spectrum. Typical values of the quantum efficiency at 187 nm and 800 nm are 22% and 0.05%, respectively, with zero bias. Rise and decay times in the dark under a 1 V peak-to-peak square wave are less than 1 μs. These devices are candidate for application in large area systems for detection of UV light.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(96)00112-3