Radiation induced detrapping of implanted deuterium in BeO by high energy 3He and proton irradiation

BeO layers formed on Be are implanted with 5 keV deuterium ions and the amount of gas retained is determined using the D( 3He, H) 4He nuclear reaction. Detrapping of the retained deuterium by 790 keV 3He and 2.2 MeV H bombardment is measured at temperatures between 140 and 470 K and detrapping cross...

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Bibliographic Details
Published in:Journal of nuclear materials 1979-12, Vol.85, p.1025-1029
Main Authors: Scherzer, B.M.U., Blewer, R.S., Behrisch, R., Schulz, R., Roth, J., Borders, J., Langley, R.
Format: Article
Language:English
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Summary:BeO layers formed on Be are implanted with 5 keV deuterium ions and the amount of gas retained is determined using the D( 3He, H) 4He nuclear reaction. Detrapping of the retained deuterium by 790 keV 3He and 2.2 MeV H bombardment is measured at temperatures between 140 and 470 K and detrapping cross sections are determined. The maximum detrapping yields found are 17 D/ 3He and 0.8 D/H. The results indicate that the observed radiation induced detrapping is caused by electronic excitation.
ISSN:0022-3115
1873-4820
DOI:10.1016/0022-3115(79)90396-9