Effect of concurrent irradiation with electrons on ion-induced amorphization in silicon

The effect of concurrent irradiation with electrons on ion-induced amorphization has been investigated under irradiation with high energy ions and fast electrons in the HVEM-TANDEM Facility at Argonne National Laboratory. The simultaneous irradiation with a focused electron beam prevents or retards...

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Bibliographic Details
Published in:Journal of nuclear materials 1994-09, Vol.212, p.298-302
Main Authors: Hiroaki, Abe, Chiken, Kinoshita, Okamoto, Paul R., Rehn, Lynn E.
Format: Article
Language:English
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Summary:The effect of concurrent irradiation with electrons on ion-induced amorphization has been investigated under irradiation with high energy ions and fast electrons in the HVEM-TANDEM Facility at Argonne National Laboratory. The simultaneous irradiation with a focused electron beam prevents or retards the ion-induced amorphization, forming a distinct interface between crystalline and amorphous regions. The position of the interface has been converted to the critical electron flux, which increases with increasing energy deposition density and flux of ions and energy of electrons. It is concluded that amorphous embryos are essentially formed through overlap of subcascades, and that the prevention of ion-induced amorphization is mainly caused by athermal migration of point defects.
ISSN:0022-3115
1873-4820
DOI:10.1016/0022-3115(94)90075-2