Some semiconducting properties of bismuth trisulfide

Single crystals, dendrites, and crystalline films of bismuth trisulfide, Bi 2S 3, have been prepared and studied. From the films a thermal energy gap of 0̃72 eV is found, in the range 300–400°K. From the single crystals, optical energy gaps of 1̃4 eV at 77°K, and 1̃2...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1961-01, Vol.18 (4), p.286-289
Main Authors: Gildart, L., Kline, J.M., Mattox, D.M.
Format: Article
Language:English
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Summary:Single crystals, dendrites, and crystalline films of bismuth trisulfide, Bi 2S 3, have been prepared and studied. From the films a thermal energy gap of 0̃72 eV is found, in the range 300–400°K. From the single crystals, optical energy gaps of 1̃4 eV at 77°K, and 1̃2 eV at 300°K, are found; and resistivity, carrier concentration and mobility at 300°K are 0.85 ohm cm, 3 × 10 17 cm −3 and 50 cm 2/volt sec, respectively. Thermal conductivity and Seebeck coefficient are found to be 0̃0206 W/cm°C, and 550μV/°C, for single crystal samples in a direction parallel to the principal cleavage planes at 300°K. Preparation techniques, and the apparatus used in the thermal conductivity and Seebeck coefficient measurements, are described.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(61)90119-6