Electron-hole scattering and minority carrier mobility in germanium

In a previous publication the authors presented a theory of the effects of carrier-carrier scattering on mobility in semiconductors. In this paper we discuss the specific application of the theory to germanium in the temperature and impurity concentration ranges where measurements of the minority ca...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1961-01, Vol.18 (2), p.139-149
Main Authors: McLean, T.P., Paige, E.G.S.
Format: Article
Language:English
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Summary:In a previous publication the authors presented a theory of the effects of carrier-carrier scattering on mobility in semiconductors. In this paper we discuss the specific application of the theory to germanium in the temperature and impurity concentration ranges where measurements of the minority carrier mobility have recently been performed. This is a necessary preliminary to the main part of the paper which is a comparison between the theoretically predicted and experimentally observed minority carrier mobility in the region where, previously, discrepancies of the order of a factor of two existed. By the incorporation of electron-hole scattering, theory and experiment are brought into agreement (to within 10 to 20 per cent) for a large range of impurity concentrations, demonstrating the importance of electron-hole scattering on the minority carrier mobility.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(61)90156-1