The trapping of photocarriers in anthracene by anthraquinone, anthrone and naphthacene

The trapping of electrons and holes in anthracene crystals doped with anthraquinone, anthrone, or naphthacene has been observed when these impurities are present in concentrations of 10 p.p.m. or less. Anthraquinone and anthrone are more effective at trapping electrons than holes, probably as a cons...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1963-12, Vol.24 (12), p.1609-1615
Main Authors: Hoesterey, D.C., Letson, G.M.
Format: Article
Language:English
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Summary:The trapping of electrons and holes in anthracene crystals doped with anthraquinone, anthrone, or naphthacene has been observed when these impurities are present in concentrations of 10 p.p.m. or less. Anthraquinone and anthrone are more effective at trapping electrons than holes, probably as a consequence of their high electron affinities. Naphthacene acts as a hole trap located 0.43 eV above the hole band and having a capture cross-section exceeding 10−15 cm2. The behavior of the hole photocurrent in naphthacene-doped anthracene is indirect support for the hypothesis that the holes move in a band whose energy width is comparable to 180 eV.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(63)90104-5