Defect structure and electrical conductivity studies of thulium sesquioxide

• Published in: The Journal of physics and chemistry of solids 1986, Vol.47 (2), p.117-120
• Main Authors: Jae Shi Choi, Keu Hong Kim, Won Yang Chung
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; detect structure; electrical conduction mechanism; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Thulium sesquioxide
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/0022-3697(86)90119-8

The electrical conductivity of thulium sesquioxide has been measured from 400 to 1100°C under oxygen partial pressures ( P o 2 ) of 10 −6 to 10 −1 atm. Plots of log conductivity vs 1/ T at constant P o 2 are found to be linear with an inflection point, the activation energies obtained from the slopes being 34.5 kcal/mole in the higher temperature region and 19.3 kcal/mole in the lower temperature region. The P o 2 dependencies of the electrical conductivity are found to be linear and closely approximated by σ ∝ P 1 5.3 o 2 in the temperature range 600–1100°C and σ ∝ P 1 6.3 o 2 in the range 400–600°C. The dominant defect is V Tm ' ́ ' within the temperature region studied, but an ionic contribution exists in the lower temperature region. An interpretation of the conductivity dependences on temperature and P o 2 is presented and conduction mechanisms are suggested to account for the data.