On the interaction of copper with defects in gallium arsenide

The behavior in gallium arsenide of copper introduced through the melt has been investigated. Measurements have been made on the electrical and photoluminescent properties of single crystals that had either been quenched from T cryst, slowly cooled after crystallization or thermally annealed at 1100...

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Bibliographic Details
Published in:Journal of solid state chemistry 1971-01, Vol.3 (3), p.420-424
Main Authors: Borisova, L.A., Kolesov, B.A., Kot, K.N., Tchistanova, S.T., Mironov, K.E.
Format: Article
Language:English
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Summary:The behavior in gallium arsenide of copper introduced through the melt has been investigated. Measurements have been made on the electrical and photoluminescent properties of single crystals that had either been quenched from T cryst, slowly cooled after crystallization or thermally annealed at 1100°C after completion of the growth. On quenching from T cryst, formation of very shallow acceptors is observed. On slow cooling or annealing at 1100°C, acceptor levels are formed of the order of 0.12 and 0.02 eV. The concentration of carriers for both levels diminishes with lower temperatures of annealing and with concentration of copper added. The 0.12 eV level is assigned to the center (Cu Ga V Ga) −.
ISSN:0022-4596
1095-726X
DOI:10.1016/0022-4596(71)90079-X