Elastoresistivity of amorphous semiconductors

The influence of uniaxial strain ε on the resistivity of some amorphous semiconductors with tetrahedral shortrange order (Ge, Si, InSb, GaSb, GaAs) is measured between 125 and 550 K. The elastoresistivity m = 1 ε · Δϱ ϱ shows for these substances a similar behaviour which cannot be described by aver...

Full description

Saved in:
Bibliographic Details
Published in:Materials research bulletin 1970-01, Vol.5 (8), p.611-620
Main Authors: Fuhs, W., Stuke, J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of uniaxial strain ε on the resistivity of some amorphous semiconductors with tetrahedral shortrange order (Ge, Si, InSb, GaSb, GaAs) is measured between 125 and 550 K. The elastoresistivity m = 1 ε · Δϱ ϱ shows for these substances a similar behaviour which cannot be described by averaging the data of the crystalline material. In the intrinsic range m varies approximately proportional to 1/T. At low temperature the magnitude of Δϱ ϱ becomes comparable with the applied strain. This result is difficult to reconcile with hopping conduction.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(70)90102-9