Optimized growth conditions and properties of N-type and insulating GaN

The nucleation and growth of gallium nitride on sapphire have been studied. By an optimization of the different growth parameters, smooth, reproducible, transparent and large area layers of gallium nitride were obtained. Multi-layer structures of zinc doped GaN on N-type GaN have been grown. Devices...

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Bibliographic Details
Published in:Materials research bulletin 1976-01, Vol.11 (4), p.445-450
Main Authors: Jacob, G., Madar, R., Hallais, J.
Format: Article
Language:English
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Summary:The nucleation and growth of gallium nitride on sapphire have been studied. By an optimization of the different growth parameters, smooth, reproducible, transparent and large area layers of gallium nitride were obtained. Multi-layer structures of zinc doped GaN on N-type GaN have been grown. Devices made on these structures exhibit electroluminescence from orange to dark blue. This luminescence is obtained for voltage as low as 2.4 volts for orange, 2.6 volts for yellow, 2.8 volts for green and 3.2 volts for blue. The external power efficiency is about 10 −3 for dark green and blue light emitting devices.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(76)90094-5