Approach of the interplay between kinetics and diffusion in hot wall reactors used in V.P.E. of III–V compounds

The diffusion of species diluted in a carrier gas is determined by considering a parabolic profile of the gas velocity over the substrate. The coefficients of mass transport of III–V compounds in the chloride and hydride methods are computed. The diffusion of HCl appears as having an effect at low s...

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Bibliographic Details
Published in:Materials research bulletin 1986-10, Vol.21 (10), p.1259-1267
Main Authors: Cadoret, R., Laporte, J.L., Harrous, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The diffusion of species diluted in a carrier gas is determined by considering a parabolic profile of the gas velocity over the substrate. The coefficients of mass transport of III–V compounds in the chloride and hydride methods are computed. The diffusion of HCl appears as having an effect at low supersaturation, while the diffusion of GaCl, InCl, As 4 and P 4 molecules decreases the growth rate at high supersaturation. For input values of about 10 −3 atm., the resulting variations of partial pressures change the growth rate of about 10% at 10 μm h −1 for HCl and at 30–40 μm h −1 for GaCl and As 4.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(86)90055-3