A characterization of chromium doped GaAs substrates using photo-induced transient spectroscopy

Using Photo-Induced Transient Spectroscopy (PITS), we have been able to detect a variety of deep levels in semi-insulating GaAs:Cr bulk material. By correlating with our own previously reported Hall measurements, we have identified two specific peaks which can be used to rapidly characterize chromiu...

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Bibliographic Details
Published in:Materials research bulletin 1986-09, Vol.21 (9), p.1015-1024
Main Authors: Johnson, Stephen G., Rahimi, Saeid, Blakemore, John S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Deep Level Impurities
Electron states
Exact sciences and technology
Gallium Arsenide
Impurity and defect levels
Physics
PITS
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Summary:Using Photo-Induced Transient Spectroscopy (PITS), we have been able to detect a variety of deep levels in semi-insulating GaAs:Cr bulk material. By correlating with our own previously reported Hall measurements, we have identified two specific peaks which can be used to rapidly characterize chromium-doped samples from a single PITS scan.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(86)90216-3