Low temperature chemical preparation of semiconducting transition metal chalcogenide films for energy conversion and storage, lubrication and surface protection

A simple technique is presented for the production of films of transition metal disulfides such as MoS2, WS2, FeS2, or RuS2 by the reaction of transition metal carbonyls (e.g. Mo(CO)6, W(CO)6, Fe(CO)5, Ru3(CO)12) with a sulfur source (e.g. S, H2S) in an organic solvent (e.g. benzene, toluene, xylene...

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Bibliographic Details
Published in:Materials research bulletin 1988-09, Vol.23 (9), p.1261-1271
Main Authors: Chatzitheodorou, G., Fiechter, S., Kunst, M., Luck, J., Tributsch, H.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from solutions
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:A simple technique is presented for the production of films of transition metal disulfides such as MoS2, WS2, FeS2, or RuS2 by the reaction of transition metal carbonyls (e.g. Mo(CO)6, W(CO)6, Fe(CO)5, Ru3(CO)12) with a sulfur source (e.g. S, H2S) in an organic solvent (e.g. benzene, toluene, xylene, mesitylene (1,3,5-trimethyl-benzene)) at temperatures ranging between 80 to 165 °C. The quality of the materials and films has been investigated and some applications are discussed. They include use of the chemically prepared sulfides as photoactive materials (e.g. MoS2, WS2, FeS2), as lubricating films (MoS2), as electrodes for Li-batteries (MoS2, FeS2) and for corrosion protection (RuS2).
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(88)90114-6